Why optical lithography will live forever

A review. Nanoimprint lithography NIL is a high throughput, high-resolution parallel patterning method in which a surface pattern of a stamp is replicated into a material by mechanical contact and three … Expand. Will stochastics be the ultimate limiter for nanopatterning?

Resolution enhancement technology for ArF dry lithography at 65 nm node. Commercial software Prolith 9. For the last five decades, optical lithography has been used universally for the manufacture of integrated circuits. The drive towards smaller circuit feature size, and the resulting increase in … Expand. View 2 excerpts, cites methods.

Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits. New resists for nanometer scale patterning by extreme ultraviolet lithography. The goal of nanofabrication capabilities that can routinely achieve dimensions of less than 32 nm will require the design of new photopolymers and strategies using wavelengths as short as 13 nm … Expand.

Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution. Lithographic scaling entails continuously increasing resolution while at the same time improving the tolerance control on the printed images. Typically, this has been done by using shorter actinic … Expand.

Extendibility of chemically amplified resists: another brick wall? The chemically amplified resist concept, first described two decades past and originally targeted for the nm device generation, has proved to have remarkable versatility. The semiconductor … Expand. Resolution limits for electron-beam lithography. This paper discusses resolution limits for electron-beam fabrication. Electron beams have been used to produce structures 1 nm in size and useful devices with minimum features of about 20 nm.

In all … Expand. High numerical aperture lithographic imagery at the Brewster angle. Thus the lithography community must grapple with … Expand.

Nanometer sidewall lithography by resist silylation. Approximate models for resist processing effects. Process windows are frequently generated from simulated aerial image profiles by use of a threshold model for the resist process, an assumption which is not accurate for many processes.

In this … Expand. Reprinted with permission. SPIE Vol. Not only must the process resolve the minimum feature size but overlay errors must be held to tight tolerances, exquisitely complex patterns must be printed with high yield, and the overall cost of the process must be acceptable. Achieving acceptable chip cost using an expensive exposure tool is strongly linked to high throughput, and this in turn is linked to resist processes with high sensitivity.

In recent years, chemically amplified resist processes have dominated state-of-the-art production because of their high resolution and excellent sensitivity. This article will consider limitations of resolution for production lithography, both the resolution limits of the exposure tool itself and the resolution limits of the resist process.

Among the most important considerations for production processes is the tradeoff between resist process sensitivity and resolution. Fundamental reasons underlying the success of optical lithography for manufacturing integrated circuits will be described. These considerations will illuminate the challenges and opportunities for future lithographic methods. Almost every type of exposure energy— photons of various wavelength or particle beams—has…. Tim Brunner. Read full article. Human brain organoids assemble functionally integrated bilateral optic vesicles 3 months ago.